Analysis Of The Siox Film Microstructure On Al Substrate By Apcvd Process

A new kind of SiOx film on Al substrate,prepared by Ambient Pressure Chemical Vapor Deposition (APCVD) is reported in this paper. It is proposed that the SiOx particles as products of SiH4 and O-2 reaction deposited on the heated Al surface, followed by close packing and further growth to form the thin film. The morphology, composition and microstructure of the film are characterized by SEM, XPS, XRD and HRTEM. The results show that the SiOx film comprises a majority of uncrystalline structure with a fraction of dispersed ordered zones and the atomic ratio of Si/O in the film is 1:1.60 similar to 1:1.75. The tests show that the film is well-bonded with the substrate.