Direct, Etching Of Gaas Crystal Excited By A Vacuum Ultraviolet Lamp

Zf Han,Yl Liao,Hj Zhou,Zh Jiang,Gb Zhang,Zl Cao

Chinese Physics Letters（2003）

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摘要

A successful direct, etching system excited by a vacuum ultraviolet hollow-cathode lamp is reported. The result shows that the facility can transfer a mesh pattern exactly and directly to n-type GaAs wafer, which is the same as that direct, etched by synchrotron radiation.

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关键词

Atomic Layer Etching,Plasma Etching

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