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GaAs基异质结材料MBE生长及应用

邱凯,尹志军,谢自力

Guti Dianzixue Yanjiu Yu Jinzhan/Research & Progress of Solid State Electronics（2002）

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Abstract
对GaAs基调制掺杂异质结材料中作为沟道层的InGaAs的生长条件进行优化,并在缓冲层中嵌入LT-GaAs.功率PHEMT器件结果为在栅长Lg＝1.7 μm时,跨导gm≥400 mS/mm,BVDS＞15 V,BVGS＞12 V,表明该材料有较好的性能.
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Key words
LT-GaAs,MBE,Modulated doping,PHEMT
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