铟镓氮薄膜的光电特性
Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors（2002）
Abstract
用金属有机物气相外延设备,在氮化镓/蓝宝石复合衬底上快速外延生长铟镓氮薄膜,并对其进行了X射线三晶衍射、光致发光、反射光谱及霍尔测量等实验测试.确定该薄膜为单晶,其中In组分可以从0增加到0.26;在光致激发下发光光谱为单峰,且峰值波长在360～555nm范围内可调;其发光机理被证实为膜内载流子经带隙跃迁而直接复合;并具有很高的电子浓度.但InGaN薄膜的结晶质量却随着In含量的增加而变差.
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Key words
InGaN,MOVPE,PL
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