GSMBE-grown 1.8-2.0 micron waveband InGaAs/InGaAsP strained quantum well lasers

GSMBE (gaseous source molecular beam epitaxy) grown 1.8-2.0 μm waveband InGaAs/InGaAsP/InP strained quantum well lasers were reported. At 1.8 μm wavelength, the lasers with 10 μm and 80 μm wide planar electrical stripe structures were fabricated, which were observed with pulsed electric luminescence at room temperature, and the estimated peak wavelength is about 1.80 μm. At 77 K, the 10 μm and 80 μm-wide-stripe lasers become lasing in the pulsed regime, with the threshold currents of about 250 mA and 600 mA and the center wavelengths of 1.69 μm and 1.73 μm, respectively. The 80 μm wide-stripe laser can be found with the multiple-longitudinal-mode operation, while the 10 μm one is of the two or three-longitudinal-mode operation. At 2.0 μm wavelength, the lasers with 8 μm-wide ridge waveguide structures were fabricated. At room temperature the pulsed electric luminescence spectrum was observed with the peak wavelength of about 1.98 μm. At 77 K, the lasers become lasing in the pulsed regime, with the threshold current of about 20 mA and the center wavelength of 1.89 μm, while its single-longitudinal-mode operation is performed in the current range of 160-230 mA.