TEMPERATURE EFFECTS OF γ-IRRADIATED METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT-TRAN SISTOR

Wang Jianping,Xu Najun,Zhang Tingqing,Tang Hualian,Liu Jialu,Liu Chuan Yang,Yao Yujuan,Peng Honglun,He Baoping,Zhang Zhengxuan

Wuli Xuebao/Acta Physica Sinica（2000）

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Abstract

Effects of irradiation temperature are explored for metal-oxide-semiconductor de vice under γ-rays.Hardened CC4007 chips were irradiated under different tempera tures,gate bias and annealing conditions.Threshold voltage shift was divided int o V ot and V it using mid-gap voltage method.Finally,the mec hanism of threshold shift was discussed.

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Key words

MOS-field effect transistor,Radiation effects,Threshold voltage shift

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