Monolithic integration of DFB laser diode and electroabsorption modulator by selective area growth technology

In this article, first we classified the controllability of energy gap in selective area growth (SAG) technology. The red-shift of wavelength from 1.51 to 1.58 μm was realized when the SiO2 mask stripe width varied from 0 to 30 μm. The monolithic integration of a distributed feedback (DFB) laser diode with an electroabsorption modulator by SAG technology was demonstrated. InGaAsP multi-quantum well structure was employed as the active layer of laser and modulator, which was grown at the same time with grating in the laser region. The static attenuation of 5 dB at -2.5 V is achieved.