Relationship Between Deep-Level Centers And Stoichiometry In Semi-Insulating Gallium Arsenide
JOURNAL OF APPLIED PHYSICS(1998)
摘要
Experimental results have shown the fact that the deep-level centers in semi-insulating GaAs decrease with the improvement in stoichiometry. The electrical resistivity doubles when the concentration of EL2 centers decreases to a half. The microgravity-growth experiments also show that improved crystal stoichiometry results in a decrease of deep-level centers. (C) 1998 American Institute of Physics. [S0021-8979(98)04921-4].
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关键词
electrical resistance,gallium arsenide
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