Study of pressure and temperature dependence of electrical properties in new intrinsic semiconducting polyacene quinone radical polymer

PROCEEDINGS OF THE 1998 IEEE INTERNATIONAL CONFERENCE ON CONDUCTION AND BREAKDOWN IN SOLID DIELECTRICS - ICSD '98(1999)

引用 0|浏览2
暂无评分
摘要
We have synthesized several new polyacene quinone radical co-polymers first by condensation and experimentally found a kink at about 1.1 kbar on plots of log d.c. conductivity versus the square root of external pressure in a range from 0.1 to 10 kbar. we consider the possibility of the application of Mott's T1/4 law to the higher temperature region of 290-400 K and analyse trends of change between d.c conductivity and spin concentration with mole fraction of 4,4'(hexafluoroisopropylidene diphthalic anhydride) (HFDA) (introduced to improve the stability). Plots of log dielectric constant versus the square root of pressure do not fully obey the linear relationship expected by Pohl. Here we give a reasonable explanation of these experimental results
更多
查看译文
关键词
electrical conductivity,materials preparation,organic semiconductors,permittivity,polymer blends,0.1 to 10 kbar,290 to 400 K,4,4'(hexafluoroisopropylidene diphthalic anhydride),HFDA,condensation,dielectric constant,intrinsic semiconductor,log DC conductivity,polyacene quinone radical polymer,pressure dependence,spin concentration,temperature dependence,
AI 理解论文
溯源树
样例
生成溯源树,研究论文发展脉络
Chat Paper
正在生成论文摘要