Quantitative SIMS depth profiling for complex multilayers

The quantitative depth profiling methods of AlxGa1-xAs complex multilayers using CAMECA IMS-4f SIMS (secondary ion mass spectrometer) have been discussed. By the use of CsM+ technique, the compositional analysis of matrix elements has been completed, even without external reference materials. A new depth scale calibration method using the varied sputtering rate has been put forward and experimentally proven. The choice of the suitable secondary ions for the impurity quantitative analysis in complex multilayers has been discussed in details. Experimental evaluation of impurity has been tried when it is deficient in enough reference materials. SIMS quantitative analysis of complex multilayers has been realized. Consequently, the quantitative depth profiling results of both matrix elements and impurities have been achieved by the same instrument, and the high depth resolution is held as well.