Interface formation of several heterojunctions concerning IV and II-VI semiconductors

The interface formations of the heterojunctions concerning IV and II-VI semiconductors were studied via synchrotron radiation photoemission spectroscopy. Experimental results show that the over-layer growths of Si or Ge on Ge, ZnSe and ZnS substrates are in compliance with an ideal two dimensional (2D) growth mode. However, deviations from 2D mode were also observed during the interfaces formation of Ge/CdTe and Si/CdTe, and are ascribed to large lattice mismatching and interfacial reaction.