Piezoresistivity study of p-type diamond film with localized heteroepitaxial growth

The piezoresistive effect of p-type diamond film with localized heteroepitaxial growth was investigated. The gauge factor for the films at 200 microstrain is found to be about 1300 at room temperature, exceeding that of crystalline silicon. This is due to the facts that the defects in the epitaxial growth films are decreased and the measurement methods are improved. The origins of piezoresistive effect in the diamond films are also discussed briefly.