Electrical properties of contact of solid C60 and n-type GaAs

The electrical properties of the heterojunction of solid C60/n-type GaAs were studied. The results of current-voltage measurements indicate that this contact has a pretty ideal rectifying property, and the ideality factor is near to 1. The current-temperature measurements show that under a fixed forward bias the current is an exponential function of reciprocal temperature from which the effective barrier height of the contact is determined to be 1.02eV. High frequencies C-V and deep level transient spectroscopy (DLTS) measurements show that at C60/GaAs interface there is a trap with density of about 1011/cm2 and with energy level at 0.35eV below the conduction band. The trap may be originate from interaction of C60 and GaAs.