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S2Cl2 passivation of GaAs/AlGaAs HBT

Xian'an Cao,Xiying Chen,Zheshen Li,Runzhou Su,Xunming Ding,Xiaoyuan Hou,Feng Qian,Xiaoe Yao,Xiaojian Chen

Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors（1997）

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Abstract
The diluted S2Cl2 solution has been employed to treat the GaAs/AlGaAs HBT's and their DC properties have been improved significantly. The study of low-temperature characteristics and real-time passivation have confirmed that the surface recombination velocity of GaAs can be reduced efficiently. S2Cl2 treatment is a promising passivation process in the fabrication of GaAs devices.
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