DEEP LEVELS AND FREE-CARRIER COMPENSATION IN NITROGEN-IMPLANTED GaAs

This work presents a detailed study of deep and shallow level defects in nitrogen implanted n-type GaAs. Deep-level transient spectroscopy (DLTS) measurements show four electron traps and one hole trap in 140 keV nitrogen implanted GaAs after a dose of 1×10 13 cm -2 and a thermal annealing at 800℃ for 30 min: E 1 (0.111) ,E 2 (0.234) ,E 3 (0.415) ,E 4 (0.669) ,and H(0.545). Meanwhile,only E 4 and H(0.545) defects are observed in 10 keV nitrogen-implanted GaAs after a dose of 5×10 14 cm -2 and the same annealing treatment. It oncluded that E 2 and E 3 correspond to the damages due to the high-energy implantation, E 4 may be complex of intrinsic defect and implantation damage, H(0.545)is a nitrogen-related deep-level and may contribute to the free-carrier compensation in the nitrogen-implanted n-type GaAs.