Quantitative analysis of Si in AlxGa1-xAs using quadrupole-based SIMS instrument

Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors(1996)

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Abstract
Experimental methods in quantitative analysis of Si in AlxGa1-xAs using MIQ156 quadrupole-based SIMS instrument have been discussed. Reproducibility of the experimental results and the dependence of RSF for Si upon x have been studied. Comparisons between the results obtained from MIQ-156 and IMS-4f SIMS instruments have been made. The detection limit of 4��1015cm-3 for 29Si atoms is obtained by using Cs+ primary ion beam on MIQ-156.
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