Study On Solid State Reaction Of Tin/Co/Ti Multi-Layer With Amorphous Silicon

PROCEEDINGS OF THE FOURTH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGY(1995)

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摘要
Solid state reaction of TiN/Co/Ti multilayer with PECVD amorphous silicon has been studied. Experimental results show that uniform polycrystalline CoSi2 with good thermal stability, smooth surface can be obtained after thermal annealing.
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关键词
titanium,x ray diffraction,auger effect,si,scanning electron microscopy,thermal annealing,cobalt,surface resistance,thermal stability,tin,annealing,thermal resistance
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