Formation Of Nitrogen-Oxygen Donors In N-Doped Czochralski-Silicon Crystal

The behavior of nitrogen and the formation of nitrogen-oxygen donors in nitrogen-doped Czochralski-silicon crystals (Ct-Si) were studied by the electrical and infrared-absorption measurements in samples annealed in different conditions. Experiments showed that nitrogen-oxygen shallow donors are formed during the nitrogen-doped Ct-Si crystal growth. Nitrogen-oxygen thermal donors are generated in temperature range of 300-550 degrees C, and the behavior of these thermal donors resembles that of the thermal donors in Ct-Si crystals [P. Wagner, C. Helm, and E. Stirtl, Festkoperprobleme 24, 191 (1984)], but they are monovalent donors with the same levels as those of neutral thermal donors; no new electrically active center is generated in the temperature range of 600-900 degrees C.