Room temperature visible PL from porous PECVD silicon film

The experiment concentrated on porous microcrystalline silicon films. The Boron-doped hydrogenated microcrystalline silicon films were anodized in bydrofluoric acid solution. The photoluminescence (PL) spectrum and PL excitation spectrum were measured, and the results obtained were compared to those of porous silicon made from P-type crystalline silicon. The PL spectrum shows two peaks at 2.86eV and 1.94eV, respectively. The PL excitation spectrum consists of a series of pears, including three high energy peaks located at 5.16eV, 4.13eV and 3.34eV, respectively, and a low energy peak at 2.99eV.