Investigation Of The Range Distribution Of Yb Ions Implanted In Soi

The mean projected ranges and range straggling for energetic 200 - 500 keV Yb ions implanted in silicon-on-insulator (SOT) were measured by means of Rutherford backscaftering followed by spectrum analysis. The measured values are compared with Monte Carlo code (SRIM2012) calculations. It has been found that the measured values of the mean projected range R-p are good agreement with the SRIM calculated values; for the range straggling Delta R-p, the difference between the experiment data and the calculated results is much higher than that of R-p