Simulation, fabrication and characterization of 6500V 4H-SiC JBS diode

Runhua Huang,Yonghong Tao,Gang Chen,Song Bai,Rui Li,Yun Li

ADVANCES IN MECHATRONICS, AUTOMATION AND APPLIED INFORMATION TECHNOLOGIES, PTS 1 AND 2（2014）

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摘要

4H-SiC JBS diode with breakdown voltage higher than 6.5 kV has been successfully. fabricated on 4H-SiC wafers with epitaxial layer. In this paper, the simulation, the fabrication, and the electrical characteristics of 4H-SiC JBS diode were reported. The drift layer thickness and doping are 55 mu m and 9x10(14) cm(-3) respectively. 60 floating guard rings edge were fabricated as termination. The on-state voltage was 4 V at J(F) = 7A.

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关键词

4H-SiC,JBS diodes,Edge termination,floating guard rings

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