Investigation on Switching Energy Losses in Reversely Switched Dynistor
Power Electronics, IEEE Transactions (2014)
Abstract
This paper presents theoretical and experimental results on the energy loss characteristics of reversely switched dynistor (RSD) under high-current conditions. Theoretical analysis was performed based on a 1-D modified model by taking account into the carrier-carrier scattering effect and auger recombination effect during the conducting process. The experimental results of energy losses in RSD at various amplitudes of high pulse current were accurately obtained using the direct current injection method. The typical experimental results show that a single RSD has a voltage drop of approximately 9 V with a pulse current of 150 kA, transferred charge of 26.5 C. The theoretical calculated voltage drop based on 1-D modified model is approximately 7.7 V under the same conditions. The theoretical results based on the 1-D modified model almost agree well with the experimental results.
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Key words
direct current injection method,energy loss,auger recombination effect,reversely switched dynistor (rsd),energy loss characteristics,conducting process,auger effect,current 150 ka,voltage drop,carrier-carrier scattering effect,1d modified model,reversely switched dynistor,switching energy losses,high pulse current,high-current conditions,power semiconductor switches,pulsed power,rsd,losses,solid-state switches,electric potential,electron-hole recombination,high current,power dissipation,switches,plasmas
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