An Explicit Surface-Potential-Based Model for Amorphous IGZO Thin-Film Transistors Including Both Tail and Deep States
Electron Device Letters, IEEE （2014）
Abstract
A compact drain current model of amorphous In-Ga-Zn-O thin-film transistors based on terms of surface potential is presented in this letter. An explicit and closed-form scheme for the surface potential calculation is developed by including both exponential deep and tail states. With the effective charge density approach, the resulting dc and surface potential models give accurate descriptions with single-piece formulas, which are suitable for CAD applications. The proposed models are verified by both the numerical simulation and experimental result, and a good agreement is achieved over a wide range of operation regions.
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Key words
compact drain current model,charge density approach,semiconductor device models,closed-form scheme,indium compounds,amorphous semiconductors,wide band gap semiconductors,explicit surface-potential-based model,amorphous igzo thin film transistor,surface potential,amorphous thin-film transistors,dc models,in-ga-zn-o,gallium compounds,drain current model,ii-vi semiconductors,deep states,cad applications,zinc compounds,thin film transistors,tail states,logic gates,electric potential,solid modeling
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