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Ba2TiSi2O8晶体的生长及包裹物缺陷分析

Xiao-feng LIU,Qing-ke WEI,Jian-bing YU,Xiao-lin HU,Nai-feng ZHUANG,Shu-kun LIN,Jian-zhong CHEN

Rengong Jingti Xuebao/Journal of Synthetic Crystals（2013）

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Abstract
采用提拉法生长了Ba2TiSi2O8 (BST)晶体,并采用SEM和EDS等手段对晶体内部包裹物缺陷进行了分析.发现多晶原料中的Na,K,C1杂质元素的存在是导致晶体内部产生包裹物缺陷的主要诱因,采用低的生长速率和较快的晶体转速有利于获得高质量BTS单晶.另外,本论文还对晶体的硬度和透过光谱进行了测试与分析.
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Key words
Ba2TiSi2O8,Crystal defect,Czochralski method,Hardness
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