Experimental study of damage effect on complementary metal oxide semiconductor detector irradiated by 1064 nm nanosecond single-pulse laser

Using a 60 ns, 1064 nm single-pulse laser to radiate the front illuminated complementary metal oxide semiconductor (CMOS) detector, with the deepening of the damaged degree, point damage, half black line damage, as well as black lines cross damage are observed when laser energy density are 0.38, 0.64, 1.0 J/cm2. Enhancing laser energy density, black lines cross damaged region is thicker, and coverage area expands. Even if the laser energy density reaches 2.8 J/cm2, black line has covered most of the detector pixels, the detector still doesn't completely lapse, the undamaged area can imaging. Based on the structure and working principle of CMOS, studying the damage mechanism by theoretical analysis, point damage is caused by the increase in leakage current due to structural defects resulting from thermal effects, and half black line damage and black lines cross damage are caused by signal interruption due to the device circuit fuses cutting.