A novel straight through-MOS-triggered SCR for on-chip ESD protection

Jianfeng Zheng,Fei Ma,Yan Han,Hailian Liang,Shurong Dong,Jian Wu

Guti Dianzixue Yanjiu Yu Jinzhan/Research and Progress of Solid State Electronics（2013）

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摘要

A novel straightthrough-MOS-triggered silicon controlled rectifier (STSCR) and conventional MOS-triggered SCR(TSCR) for on-chip electrostatic discharge (ESD) protection are verified in a 0.13 μm CMOS process. TLP (Transmission-line-pulsing system) testing results for these two structures show that the novel straightthrough-MOS-triggered SCR structure possesses a lower trigger voltage, a smaller turn-on resistance, a faster turn-on efficiency and a higher failure current.

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关键词

Electrostatic discharge (ESD),Embedded-MOS FET trigger,Silicon controlled rectifier(SCR)

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