Electrical Bistabilities Of Write-Once-Read-Many-Times Memory Devices Fabricated Utilizing Indium Tin Oxide Nanoparticles Embedded In A Poly 4-Vinyl Phenol Layer

A novel write-once-read-many-times (WORM) memory device, based on ITO nanoparticles and poly 4-vinyl phenol polymers core-cell hybrid and polystyrene, has been fabricated. The fabricated device showed high stable electrical bistability in the I-V characteristics and could be used to perform WORM memory functions. Compared with existing memory devices of the same type, the novel device possessed higher maximum ON/OFF current ratio of more than 10(4), longer data-retention time and better storage stability.