Memristive properties of transparent ({\rm La},\,{\rm Sr}){\rm MnO} 3 thin films deposited on ito glass at room temperature

Amorphous La1-xSrxMnO3 (a-LSMO) thin films were deposited on indium tin oxide (ITO) glass at room temperature by radio frequency magnetron sputtering. The transmittance of a-LSMO (10 nm)/ITO/glass is 75% at 600 nm, which is promising for transparent memristors. The Ag/a-LSMO (10 nm)/ITO/glass memristor exhibits nonvolatile bipolar resistive switching properties with a resistance ratio >10, stable write/erase endurance (>10(2)), and long retention (>10(4) s). The memristor can exhibit pinched hysteresis loops under high-frequency voltage excitations. These memristive properties are ascribed to diameter changes of the Ag nanofilament in the a-LSMO.