Reliability significant improvement of resistive switching memory by dynamic self-adaptive write method

We propose and demonstrate a dynamic self-adaptive write method (DSWM) for the first time, which fixes the reliability problem that over-set or over-reset degrades ReRAM endurance and retention of tail bits significantly. The demonstration is carried out on a 128Kb test macro of AlOx/WO x bi-layer ReRAM fabricated based on 0.18μm standard logic Al interconnect. Results show that the mean value of endurance distribution is improved by 2 orders of magnitude from 105 to 107 and the optimized retention of 128Kb array including tail bits is 85°C @10yrs. The improvements are attributed to the decrease of Joule thermal damage by DSWM. © 2013 JSAP.