The measurement of dislocation on InP wafers

Qingfang Huang,Zhiguo Liu,Ruixia Yang,Xiaolan Li,Qiang Wang,Xiuwei Tian,Jianye Yang,Shuai Li,Huimin Shao,Yanlei Shi,Xin Zhang,Ning Li,Yong Kang,Huisheng Liu,Tongnian Sun,Niefeng Sun

Indium Phosphide and Related Materials（2013）

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Abstract

We studied the effect of HCl, H3PO4, HBr etchants, temperature, illumination on the display of dislocation pits on <;100> InP single crystal wafers, and analyzed the effect of illumination, using the wet chemical etching method. The experimental results show that the etching rate is strongly dependent on the proportion of HBr in the mixed etchant and HBr alone can reveal dislocation pits on <;100> InP wafers. Both illumination and higher temperature can increase the etching rate. We also discuss the mechanism of different sizes of dislocation pits.

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Key words

indium compounds,inp,iii-v semiconductors,dislocation,dislocation pits,single crystal wafers,wet chemical etching method,etching,wet chemical etching,lighting,chemicals,crystals

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