Overcoming the Dilemma Between RESET Current and Data Retention of RRAM by Lateral Dissolution of Conducting Filament

Haitao Sun,Hangbing Lv,Qi Liu,Shibing Long,Ming Wang,Hongwei Xie, ,Xiaoyi Yang,Jiebin Niu,Ming Liu

Electron Device Letters, IEEE（2013）

引用 33|浏览35

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摘要

Resistive switching memory with low switching current is critical for low-power application. In this letter, we successfully demonstrated a four-terminal resistive RAM device with ultra-low switching current. The device is SET by one pair of electrodes and RESET by the other. The rupture process of conductive filament can be resulted from electrochemical reaction dominated by the lateral electric field. Therefore, during RESET process, no current flows through the filament, leading to an ultra-low switching current.

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关键词

resistive switching memory,data retention,electrode,conducting materials,conductive filament,random-access storage,electrochemical reaction,reset current process,rram,side-reset,electrochemical analysis,ultralow switching current,electrochemical electrodes,lateral electric held,resistive random access memory (rram),low-power electronics,planar structure,lateral dissolution,conducting filament,low power,low-power application,dissolving,rupture process,switching circuits,four-terminal resistive ram device,low power electronics

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