Characterization of Ga co-doping mc-Si ingot made of solar-grade silicon purified by metallurgical route
ADVANCED RESEARCH ON INFORMATION SCIENCE, AUTOMATION AND MATERIAL SYSTEMS III(2013)
Abstract
In this paper, we investigated the characterization of a gallium co-doping multicrystalline silicon ingot made of solar-grade silicon purified by metallurgical route. It is shown that the addition of gallium yields a fully p-type ingot and resistivity distribution in the range from 1.2 Omega . cm to1.7 Omega . cm along the full ingot height. Minority carrier lifetime measurements indicate that this material is suitable for the production of solar cells with comparable efficiencies to standard material. In addition, gallium addition in compensated silicon during ingot casting is proved to be very prospective for controlling the resistivity and increasing material yield of ingot.
MoreTranslated text
Key words
gallium,resistivity,minority carrier lifetime,silicon ingot
AI Read Science
Must-Reading Tree
Example
![](https://originalfileserver.aminer.cn/sys/aminer/pubs/mrt_preview.jpeg)
Generate MRT to find the research sequence of this paper
Chat Paper
Summary is being generated by the instructions you defined