Electronic structure of different Ga0.5Al0.5As surface from first-principles

Advanced Optoelectronics for Energy and Environment, AOEE 2013（2013）

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摘要

Using first-principles plane-wave pseudopotential method, electronic structure of Ga0.5Al0.5As (001), (011) and (111) surfaces are analyzed, result shows that Ga0.5Al0.5As (001)β2(2×4) surface owns the best photoemission properties. © OSA 2013.

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