Temperature Characteristic Of Inas/Ga(In)Sb Middle Wavelength Infrared Detectors

InAs/Ga(In)Sb type-II superlattice infrared detectors based on mature III-V material and devices technology has lots of advantages such as tunable energy structure and wide response wavelength range, low dark current and high performance under high temperature, etc. It has been chosen as the Third-Generation infrared detector and developed rapidly in recent ten years. In this paper both theoretical and experimental study have been performed to indicate high temperature operation characterization for the InAs/Ga(In) Sb type-II superlattice middle wavelength infrared detectors. Photo-generated carriers, the ratio of photo conductance and dark conductance were calculated by balance equation method. The dependence of I-V, optical response, device detectivity on temperature has been tested and studied to disclose temperature characteristic of the InAs/Ga(In) Sb type-II superlattice infrared detectors. The results verify the middle wavelength InAs/Ga(In) Sb type-II superlattice infrared detectors can operate at high temperature with high performance.