ZnO Branched Nanowires and the p-CuO/n-ZnO Heterojunction Nanostructured Photodetector

IEEE Transactions on Nanotechnology(2013)

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摘要
The authors report the growth of ZnO branched nanowires on the CuO nanowires and the fabrication of p-CuO/n-ZnO heterojunction nanostructured photodetector (PD). It was found that the hydrothermally grown ZnO branched nanowires were reasonably uniform with an average length of 200 nm and an average diameter of 50 nm. Under forward bias, it was found that turn on voltage of the fabricated PD reduced from ∼0.7 to ∼0.2 V under ultraviolet (UV) illumination. It was also found that UV-to-visible rejection ratio of the fabricated device was larger than 100.
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关键词
nanofabrication,wide band gap semiconductors,branched nanowires,semiconductor heterojunctions,cuo-zno,size 200 nm,cuo,ii-vi semiconductors,nanowires,ultraviolet illumination,zno,heterojunction,copper compounds,hydrothermal grown branched nanowires,photodetectors,ultraviolet detectors,size 50 nm,semiconductor growth,photodetector (pd),zinc compounds,heterojunction nanostructured photodetector,uv-visible rejection ratio,forward bias,lighting,zinc oxide,temperature measurement,fabrication
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