Amorphous Ge2sb2te5 Chemical Mechanical Planarization Using (Nh4)(2)S2o8 Or H2o2 As Oxidizer In Acidic Slurry

The author survey the role of (NH4)(2)S2O8 and H2O2 as oxidizer on the amorphous Ge2Sb2Te5 (a-GST) chemical mechanical planarization (CMP) in acidic slurry, respectively. Compared with H2O2, higher removal rate and higher sheet resistance are achieved with (NH4)(2)S2O8 after a-GST CMP. To understand the oxidation-reaction capability of Ge, Sb and Te elements, potentiodynamic polarization curves, the depth profiles of composition elements and etch morphology of a-GST immersed in slurries for some time are conducted, respectively. At last, the possible polishing mechanism for a-GST CMP is presented briefly. (C) 2012 The Electrochemical Society.