Investigation on deep energy levels formed by sulphur implantation into silicon

In this article n-type silicon was implanted with 1 × 1014/cm2 with an energy of 500 keV to introduce S impurities, and the deep energy levels formed by this process was studyed by deep-level transient spectroscopy (DLTS) method. Some deep level peaks are observed and their level position, capture cross section and concentrations are measured.