The Stability of IGZO-TFT with Reactive Sputtered SiOxInsulator under White Light Illumination

We systematically investigated the stability of gallium indium zinc oxide (IGZO) thin film transistor (TFT) with reactive sputtered SiOx insulator under white light illumination. The research involved an overall stress conditions that included light stress (LS), negative voltage stress (NBS), positive voltage stress (PBS), negative bias-light stress (NBLS), and positive bias-light stress (PBLS). The results demonstrate a large threshold voltage shift under LS and NBLS conditions, and a negligible threshold voltage shift under PBLS condition. The C-V characteristics indicated that the shift of threshold voltage came from traps generated at or near the dielectric/semiconductor interface. Additionally, the stretched exponential model was used to obtain the relaxation time. This work aimed to provide an instability origin of IGZO-TFT under white light illumination and gate voltage bias.