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电子束退火制备二硼化镁超导薄膜的可行性研究

Xiangdong Kong,Qian Dai,Li Han,Qingrong Feng,Mingzhang Chu,Hong Xue,Jianguo Li

Zhenkong Kexue yu Jishu Xuebao/Journal of Vacuum Science and Technology（2012）

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Abstract
提出了电子束退火制备MgB2超导薄膜新工艺.在对电子束退火制备MgB2超导薄膜可行性进行理论研究的基础上,使用EBW-6型电子束热处理设备,在真空度5.0×10-3 Pa、加速电压40kV、束流2mA、束斑14.2 mm、退火时间1.5s的条件下对[B(10 nm)/Mg(15 nm)]4/SiC夹层结构前驱膜进行了退火实验,得到了零电阻温度为30.3 K、转变宽度△Tc为0.4K、临界电流密度(SK、0 T)为5.0×106 A/cm2、表面平整的MgB2超导薄膜.证明了电子束退火制备MgB2薄膜是切实可行的.该工艺可以推广到大面积MgB2超导薄膜和MgB2线带材的制备.
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Key words
Electron beam annealing,MgB 2,SiC substrate,Superconducting thin film
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