CeO2掺杂对HfO2栅介质电学特性的影响
Xiyou Jinshu/Chinese Journal of Rare Metals（2012）
Abstract
采用磁控共溅射的方法在p-Si(100)衬底上沉积了掺杂和不掺杂CeO2的HfO2薄膜.通过X射线光电子能谱(XPS)研究了薄膜中元素的化学计量比及结合能,制备MOS结构并对漏电流及电容等电学性能进行表征.结果表明,掺入CeO2后,整个体系的氧空位生成能增大,氧空位数目减少,漏电流较纯HfO2下降了一个数量级,满足作为高k材料的要求.
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Key words
CeO 2,Doping,HfO 2,High-k,Oxygen vacancy
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