后栅结构SnO2场致发射显示器件的研制
Zhenkong Kexue yu Jishu Xuebao/Journal of Vacuum Science and Technology（2012）
Abstract
采用高温气相法生长SnO2纳米线,扫描电子显微镜和X射线衍射仪分析表明所生长的SnO2纳米线大小均匀,直径约为150 nm,长可达10 μm.结合丝网印刷法转移SnO2,制备成阴极阵列.封接阴极板与荧光屏成后栅型场致发射显示(FED)器件,测试其场致发射性能,分析讨论栅极电压和阳极电压对场发射性能的影响.实验表明后栅型SnO2-FED具有良好的栅极调控作用,在1600 V阳极电压和200V栅极电压下工作实现全屏发光,平均发光亮度为560 cd/m2,具有潜在的应用前景.
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Key words
Back-gate structure,Field emission,Nanowires,SnO 2
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