Characteristics of higher-κ dielectric LaLuO3 with TiN as gate stack

Wenjie Yu,Baoxian Zhang,Qingtai Zhao,Dan M. Buca,Alexander Nichau,Jürgen M. Schubert,Xi Wang,Siegfried Mantl

ICSICT 2012 - 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, Proceedings（2012）

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摘要

Higher-κ dielectric LaLuO3, deposited by MBD, with TiN as gate stack was integrated into SiGe p-MOSFETs. The transistors showed good characteristics. An interfacial layer between LaLuO3 and TiN was found, resulting in a smaller-than-normal CET. MBD deposition leads to unconformity on sidewall of the transistor, inducing a gate leakage path. © 2012 IEEE.

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