Reliability of inversion channel InGaAs n-MOSFETs
Solid-State and Integrated Circuit Technology（2012）
摘要
Reliability of InGaAs inversion channel n-MOSFET is investigated by systematic PBTI (positive bias temperature instability) stresses. The very complicated degradation phenomena are totally different from Si based MOSFETs. The degradation is mainly contributed by the generation of border traps under stress with recoverable donor trap of energy density ΔDSOXDONOR in the InGaAs energy gap with a tail extending to the conduction band energy, and with permanent acceptor trap of energy density ΔDSOXACCEPTOR in the conduction band energy with a tail extending to the energy gap. The border trap model can explain all the experimental details of the PBTI degradation phenomena.
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关键词
indium compounds,positive bias temperature instability stress,gallium arsenide,pbti degradation phenomena,donor trap,border trap,iii-v semiconductors,semiconductor device reliability,permanent acceptor trap,ingaas,systematic pbti,energy density,inversion channel n-mosfet,reliability,electron traps,mosfet,energy gap,conduction band energy
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