325 MHz spoke腔的二次电子倍增效应
Qiangjiguang Yu Lizishu/High Power Laser and Particle Beams（2012）
Abstract
采用CST软件的粒子工作室模块,对spoke超导腔中可能发生的二次电子倍增效应进行了分析研究,并采用二次电子倍增效应发生后形成稳定状态时的粒子数增长率来表征其强度.模拟计算表明:该腔存在两处二次电子倍增效应,spoke柱两端的两点一阶倍增；spoke腔两端侧壁与中心圆筒交界处的单点一阶倍增；二次电子倍增在加速腔压为0.65MV时的增长率最高,而腔压大于1 MV时,增长率均为负,即无倍增发生.
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Key words
Growth rate,Multipacting,Secondary electron emission coefficient,Spoke cavity
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