The study of SiC substrate MgB2 thick films growing along c axis

We have fabricated MgB2 thick films on SiC substrates growing along c axis by using hybrid physical-chemical vapor deposition (HPCVD) technique. The thickness was 8 mu m. Electric measurement showed that the Tc (onset) was 41.4K, and the transition width was 0.5K, the residual resistance ratio (RRR) was near 7. Magnetic measurement showed that the critical current density was 1.7x10(6) A/cm(2) at 5K in a self field.