晶闸管强触发电路设计
Hedianzixue Yu Tance Jishu/Nuclear Electronics and Detection Technology（2012）
Abstract
为了研究晶闸管在强触发下的导通特性,利用功率MOSFET的快开通特性和通流能力,设计了光纤控制晶闸管强触发电路.该电路中晶闸管门极触发电流峰值范围为0.35～39.6 A,前沿范围为35～540ns,电流上升率范围为3.4～83.3 A/μs.实验结果表明,该电路参数调节范围宽,触发电流抖动小(小于4ns),具有较高的稳定性和可靠性.
MoreTranslated text
Key words
Gate current,High current triggering mode,Power MOSFET,Thyristor
AI Read Science
Must-Reading Tree
Example
Generate MRT to find the research sequence of this paper
Chat Paper
Summary is being generated by the instructions you defined