InGaAs nanoflowers grown by MOCVD

InGaAs nanoflowers have been prepared on InP substrates by MOCVD, using TMIn, TMGa and AsH3 as reactive precursors at 420 degrees C. Through observation by scanning electron microscopy, we find that InGaAs nanoflowers are composed with blades and rods. The flower patterns are controlled by the growth temperature. The nanoflowers of InGaAs are disappeared, when we alter the growth temperature up and down. The InGaAs nanoflowers are In0.98Ga0.02As.