Mechanical strain altered gate and substrate currents in n and p-channel MOSFETs
Future of Electron Devices, Kansai（2012）
摘要
In this study, we experimentally examine the change of gate currents (Ig) and substrate currents (Isub) in n and pMOSFETs under different types mechanically applied stress. It is found that, under the uniaxial tensile stress, both Ig and Isub of pMOSFETs increase with the increase of the stress under the inversion condition. However, an opposite stress dependence in nMOSFETs could be observed for Ig and Isub. Similar changes were found for Ig and Isub of nMOSFETs under biaxial tensile stress. Furthermore, the results are explained by the strain altered band structure and the repopulation of carrier.
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关键词
stress dependence,mosfets,n-channel mosfet,gate currents,inversion condition,substrate currents,p-channel mosfet,nmosfet,band structure,carrier repopulation,mechanically applied stress,mechanical strain altered gate,mechanical strain,tensile strength,biaxial tensile stress,mosfet,pmosfet,stress effects,uniaxial tensile stress,silicon,strain,logic gate,logic gates,tensile stress
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