Study Of One Dimension Thickness Scaling On Cu/Hfox/Pt Based Rram Device Performance

Scaling is a key issue for resistive switching (RS) memory before commercialization. In this paper, for the first time, we reveal the impact of electrode diffusion on the device performance as the thickness of RS material scaling. Serious deterioration of on/off ratio and device yield was observed when the material scaled below 3 nm. A new method of two-step electrode deposition accompanied with re-oxidization process was employed to overcome this problem. Significant improvements of device performance such as low RESET current (similar to 1 mu A), high on/off ratio (100x) and 100% device yield were achieved thereafter.