Preparation of patterned BiFeO 3 thin films on the functional silicon substrates surface

Patterned octadecyltrichlorosilane (OTS) self-assembled monolayers (SAMs) were fabricated on silicon substrates, utilizing short wave UV irradiation meter (lambda = 184.9 nm) as the photolithograph apparatus under the cover of the photomask. The patterned BiFeO3 were prepared on the functional OTS-SAMs by sol-gel method. The characterization of the samples patterns was carried out by various techniques, including X-ray diffraction, X-ray photoelectron spectroscopy, field emission scanning electron microscopy, atomic force microscopy and energy disperse spectroscopy. The results indicate that the pattern BiFeO3 thin films were successfully prepared on the functional OTS-SAMs by sot-gel method and the thin films were BiFeO3 thin films with hexagonal perovskite distorted structure which has clear boundaries and 200 mu m deposited lines width.